symbol v ds v gs i dm t j , t stg symbol typ max 175 200 200 250 r jl 130 160 absolute maximum ratings t a =25c unless otherwise noted parameter maximum units v gate-source voltage 12 v i d 2.1 drain-source voltage 30 t a =25c p d 0.625 a t a =70c 1.7 pulsed drain current b 10 continuous drain current a t a =25c maximum junction-to-ambient a steady-state c/w w t a =70c 0.4 junction and storage temperature range -55 to 150 c power dissipation a maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w features v ds (v) = 30v i d = 2.1 a (v gs = 10v) r ds(on) < 90m ? (v gs = 10v) r ds(on) < 100m ? (v gs = 4.5v) r ds(on) < 160m ? (v gs = 2.5v) the AO7412 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v, in the small sot323 footprint. it can be used for a wide variety of applications, including load switching, low current inverters and low current dc-dc converters. standard product AO7412 is pb-free (meets rohs & sony 259 specifications). AO7412l is a green product ordering option. AO7412 and AO7412l are electrically identical. g d s sc-70-6 (sot-323) to p vie w s g d d d d AO7412 n-channel enhancement mode field effect transistor general description www.freescale.net.cn 1 / 4
symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.5 1.8 v i d(on) 10 a 69 90 t j =125c 108 130 78 100 m ? 130 160 m ? g fs 8.5 s v sd 0.8 1 v i s 2.5 a c iss 226 270 pf c oss 39 pf c rss 29 pf r g 1.4 1.7 ? q g 3 3.6 nc q gs 0.4 nc q gd 1.2 nc t d(on) 2.8 4 ns t r 2.1 3 ns t d(off) 17.4 21 ns t f 2.1 3 ns t rr 9.1 11 ns q rr 3.4 4 nc electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =16v, v gs =0v gate threshold voltage v ds =v gs i d =250 a a gate-body leakage current v ds =0v, v gs =12v r ds(on) static drain-source on-resistance v gs =10v, i d =2.1a m ? v gs =4.5v, i d =1.3a v gs =2.5v, i d =1a forward transconductance v ds =5v, i d =2.1a diode forward voltage i s =1a,v gs =0v gate drain charge maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz output capacitance reverse transfer capacitance body diode reverse recovery charge i f =2.1a, di/dt=100a/ s turn-on delaytime v gs =5v, v ds =15v, r l =7.1 ? , r gen =6 ? turn-on rise time turn-off delaytime turn-off fall time v gs =4.5v, v ds =5v on state drain current body diode reverse recovery time i f =2.1a, di/dt=100a/ s gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =4.5v, v ds =15v, i d =2.1a gate source charge a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 1 : sept 2005 AO7412 n-channel enhancement mode field effect transistor www.freescale.net.cn 2 / 4
typical electrical and thermal characteristics 60 80 100 120 140 160 0123456 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =4.5v v gs =10v 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v i d =1a v gs =10v i d =2.1a v gs =4.5v i d =1.3a 60 80 100 120 140 160 180 12345678 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =2.1a 25c 125c v gs =2.5v 0 3 6 9 12 15 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2.5v 3v 3.5v 4v 10v 6v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 v gs (volts) figure 2: transfer characteristics i d (a) 125c 25c 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c AO7412 n-channel enhancement mode field effect transistor www.freescale.net.cn 3 / 4
typical electrical and thermal characteristic s 0 4 8 12 16 20 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10ms 1ms 1s 10s dc r ds(on) limited t j(max) =150c t a =25c 100m v ds =10v i d =2.2a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =250c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c t o n t p d t o n p d 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 q g (nc) figure 7: gate-charge characteristics v gs (volts) v ds =15v i d =2.1a 0 50 100 150 200 250 300 350 400 0 5 10 15 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss AO7412 n-channel enhancement mode field effect transistor www.freescale.net.cn 4 / 4
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